Micron -176-layer NAND delivers Accelerated Data

Micron -176-layer NAND delivers Accelerated Data

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Micron -176-layer NAND delivers Accelerated Data

Micron’s 176-layer NAND serves as an essential and powerful building block in technologists’ toolboxes across a broad array of sectors.176-layer NAND delivers on the accelerated data-driven insights through innovations in memory and storage that enable new capabilities from the data center to the intelligent edge. 

Micron -176-layer NAND delivers Accelerated Data 01

  • Revolutionised Technology – Replacement-gate architecture combines charge traps with CMOS-under-array (CuA) design and approximately 30% smaller die size than best-in-class competitive offerings

 

  • Enhanced Performance35% faster read and write times* mean quicker booting and increased application responsiveness

Micron 176-layer NAND

  • Increase transfer rate – Advanced architecture represent a radical breakthrough, enabling immense gains in application performance across a range of storage use cases spanning data center, intelligent edge and mobile devices. 

 

  • Designed to deal with the bottleneck in feeding data between memory & storage: The new flash memory and dynamic random-access memory (DRAM) chips were designed to deal with the bottleneck in feeding data between memory, storage, and processing solutions in modern computers

 

  • Broad Applications– Ideal for mobile, automotive, client, consumer, and data center applications while propelling flash adoption in workloads such as data lakes, artificial intelligence, and big data analytics